microelectronic devices造句
例句與造句
- The single event effect ( see ) of space microelectronic devices has been studied
本工作進(jìn)行了空間微電子器件單粒子效應(yīng)研究。 - Determining pinhole density in photoresist films used in microelectronic device processing
微電子器件加工過程用的光刻膜中針孔密度的測定 - This paper proposes to probe more effective methods for diagnosing reliability of microelectronic devices
本論文旨在探索更有效的微電子器件的可靠性評估方法。 - By this experiment , a new method of rapid evaluation to microelectronic device has been established
通過本實(shí)驗(yàn)，已經(jīng)摸索出了一種微電子器件快速評價(jià)的新方法。 - Designers and manufacturers of microelectronic devices and systems . product details , examples of uses and technical data
-開發(fā)制造通信用射頻同軸連接器線纜組合光纖無源器件配線設(shè)備的廠家。 - It's difficult to find microelectronic devices in a sentence. 用microelectronic devices造句挺難的
- Both technique and its theory are briefly introduced , and applications to analyzing microelectronic devices are illuminated in the paper
本文簡要介紹這項(xiàng)新技術(shù)的功能原理和在微電子器件檢測等方面的具體應(yīng)用。 - Space used microelectronic devices irradiated by the ions , the curves of seu cross section of the devices versus let ( linear energy transition ) were measured
在重離子輻照下，測量器件單粒子翻轉(zhuǎn)截面( )對重離子線傳能密度( let )關(guān)系曲線，即- let曲線。 - Test methods for microbiological monitoring of water used for processing electron and microelectronic devices by direct pressure tap sampling valve and by the presterilized plastic bag method
用直接加壓分接抽樣閥和用預(yù)先消毒塑料包法對電子和微電子器件加工用水微生物監(jiān)測的測試方法 - It is a good candidate for the high quality photoelectronic and microelectronic devices , such as fiber optical communication lasers , photoelectronic detectors , high electron mobility transistors and electro - optic modulators
它是制備性能優(yōu)良的光電子與微電子器件，如光纖通訊激光器、光電探測器、高電子遷移率晶體管、電光調(diào)制器等的主要選擇對象之一。 - This paper summarizes the present situation of modern microelectronic device is . with integrated degree of circuits increasing , and the characteristic sizes of technics minishing as well as the device sizes turning into sub - micron and deep sub - micron , there are many problems
概述了現(xiàn)代微電子器件發(fā)展的現(xiàn)狀，電路集成度的不斷提高，加工工藝特征尺寸的不斷減小，器件尺寸進(jìn)入了亞微米、深亞微米階段，出現(xiàn)了許多不良效應(yīng)。 - Hence , low temperature growth of high quality silicon carbide ( sic ) film , which is advantageous to effectively solve perplexed problems existing in the film such as the self - compensation , intrinsic stress and impurity , plays a critical leading role on applications of sic film , especially the application on microelectronic devices
高質(zhì)量sic薄膜的低溫生長，不僅有利于解決自補(bǔ)償問題，而且有利于解決薄膜中存在應(yīng)力和雜質(zhì)等問題，對sic薄膜的應(yīng)用，特別是在微電子器件上的應(yīng)用非常關(guān)鍵。因此，低溫制備高質(zhì)量sic薄膜成了倍受關(guān)注的重要課題。 - Integrated vacuum microelectronic device was designed in terms of computer simulation result and semiconductor technique . we also developed zvd - 1 testing instrument for vacuum microelectronic device properties . after comparing the experimental data and simulation results of the electrical properties , we got the conclusion which will be benefit for the advanced study of vacuum microtriodes
在對模擬結(jié)果進(jìn)行仔細(xì)分析后，結(jié)合半導(dǎo)體微細(xì)加工的特點(diǎn)在工藝條件允許的范圍內(nèi)建立了一套較完整的真空微電子三極管的優(yōu)化設(shè)計(jì)方案，并從試驗(yàn)上制備出真空微電子三極管的測試樣品。 - Silicon ( si ) is the leading material of microelectronic devices , but the nature of indirect band gap of si hinders its applications in integrated optoelectronics . to develop si - based optoelectronic integration by coupling the mature technology of si microelectronic integration with si - based light - emitting material will essentially meet the increasing demand of the great progress in the information technology
硅是微電子器件的主要材料，但硅的間接能隙特性嚴(yán)重制約了其在光電子領(lǐng)域的應(yīng)用，如果能在硅基材料的基礎(chǔ)上制備發(fā)光材料，就可利用已有成熟的硅集成技術(shù)發(fā)展硅光電子集成，從而有可能完全改變信息技術(shù)的面貌。 - More recently , the advent of new soi wafer fabrication techniques and the explosive growth of portable microelectronic devices have attracted considerable attention on soi for the fabrication of low - power ( lp ) , low - voltage ( lv ) , and high - frequency ( hf ) cmos circuits . in this thesis , we study the electrical characterization on soi wafers and design a low - power soi cmos dram structure
第二部分我們對高性能低功耗soidram結(jié)構(gòu)的設(shè)計(jì)進(jìn)行了研究，設(shè)計(jì)了一個(gè)低壓低功耗soidram陣列模型，介紹了我們的dram的邏輯結(jié)構(gòu)設(shè)計(jì)，存儲單元設(shè)計(jì)，存儲器陣列的設(shè)計(jì)，及讀寫電路等外圍電路的設(shè)計(jì)。 - The rate of single event upset ( seu ) for space - based missions has been predicted by means of ground - based particle accelerator test and simulation calculation based on models of space radiation environment and the interaction of ions with the microelectronic device
我們采用的方法是用地面重離子加速器模擬實(shí)驗(yàn)和計(jì)算機(jī)模擬空間輻射環(huán)境進(jìn)行單粒子翻轉(zhuǎn)率預(yù)估計(jì)算。引發(fā)單粒子翻轉(zhuǎn)的空間高能帶電粒子環(huán)境包括銀河宇宙線，太陽宇宙線和地球輻射帶中的高能質(zhì)子及重離子。
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